PDTA114EQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Position :

Dual

Mount :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Collector Emitter Voltage (VCEO) :

150mV

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

3-XDFN Exposed Pad

Polarity/Channel Type :

PNP

Mounting Type :

Surface Mount

Resistor - Emitter Base (R2) :

10 k Ω

Series :

Automotive, AEC-Q101

Terminal Form :

NO LEAD

Current - Collector Cutoff (Max) :

1μA

Collector Emitter Breakdown Voltage :

50V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Power - Max :

280mW

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

10 k Ω

Transition Frequency :

180MHz

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Reference Standard :

AEC-Q101; IEC-60134

Transistor Type :

PNP - Pre-Biased

Packaging :

Tape and Reel (TR)

Frequency - Transition :

180MHz

Configuration :

SINGLE WITH BUILT-IN RESISTOR

JESD-30 Code :

R-PDSO-N3

Published :

2014

Number of Terminations :

3

Max Power Dissipation :

280mW