NTE67
- Mfr.Part #
- NTE67
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 400V 4.5A TO220
- Stock
- 50
- In Stock :
- 50
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3 +Tab
- Polarity :
- N
- Case Connection :
- DRAIN
- Rad Hardened :
- No
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate-Source Voltage (Max) :
- ±20(V)
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 3A, 10V
- Power Dissipation Ambient-Max :
- 75 W
- Number of Terminals :
- 3
- Type :
- Power MOSFET
- Surface Mount :
- No
- Power Dissipation-Max (Abs) :
- 75 W
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting :
- Through Hole
- Power Dissipation (Max) :
- 75W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 18 A
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Product Status :
- Active
- Operating Temperature Classification :
- Military
- Drain-source On Resistance-Max :
- 1.5 Ω
- Continuous Drain Current :
- 4.5(A)
- DS Breakdown Voltage-Min :
- 400 V
- Supplier Device Package :
- TO-220
- Number of Elements :
- 1
- Channel Mode :
- Enhancement
- Transistor Element Material :
- SILICON
- Package Type :
- TO-220
- Additional Feature :
- High Reliability
- Manufacturer :
- NTE Electronics
- ECCN Code :
- EAR99
- Series :
- -
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Drain-Source On-Volt :
- 400(V)
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 400 V
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- FET Feature :
- -
- Package :
- Bag
- Mounting Type :
- Through Hole
- Power Dissipation :
- 75(W)
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A (Tc)
- Subcategory :
- FET General Purpose Power
- JESD-30 Code :
- R-PSFM-T3
- Terminal Form :
- THROUGH-HOLE
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 30 nC @ 10 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- HTS Code :
- 8541.29.00.95
- Input Capacitance (Ciss) (Max) @ Vds :
- 780 pF @ 25 V
- Drain Current-Max (Abs) (ID) :
- 5.5 A
- Operating Temp Range :
- -55C to 150C
- Datasheets
- NTE67

N-Channel 1.5Ohm @ 3A, 10V ±20V 780 pF @ 25 V 30 nC @ 10 V 400 V TO-220-3
NTE67 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 780 pF @ 25 V maximal input capacitance.A device can conduct a maximum continuous current of [5.5 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 18 A.The DS breakdown voltage should be maintained above 400 V to maintain normal operation.To operate this transistor, you will need a 400 V drain to source voltage (Vdss).
NTE67 Features
the avalanche energy rating (Eas) is 290 mJ
based on its rated peak drain current 18 A.
a 400 V drain to source voltage (Vdss)
NTE67 Applications
There are a lot of NTE Electronics, Inc
NTE67 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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