NTE66
- Mfr.Part #
- NTE66
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 100V 14A TO220
- Stock
- 208
- In Stock :
- 208
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Power Dissipation Ambient-Max :
- 75 W
- Case Connection :
- DRAIN
- Series :
- -
- Continuous Drain Current :
- 14(A)
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Polarity :
- N
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Power Dissipation-Max (Abs) :
- 75 W
- Package Shape :
- RECTANGULAR
- Manufacturer :
- NTE Electronics
- Vgs (Max) :
- ±20V
- Technology :
- MOSFET (Metal Oxide)
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Operating Temp Range :
- -55C to 150C
- Additional Feature :
- High Reliability
- Power Dissipation (Max) :
- 77W (Tc)
- Operating Temperature Classification :
- Military
- Drain to Source Voltage (Vdss) :
- 100 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Terminal Position :
- Single
- Rad Hardened :
- No
- Mounting Type :
- Through Hole
- Package :
- Bag
- Supplier Device Package :
- TO-220
- Product Status :
- Active
- Drain-Source On-Volt :
- 100(V)
- JEDEC-95 Code :
- TO-220AB
- Type :
- Power MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 640 pF @ 25 V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting :
- Through Hole
- DS Breakdown Voltage-Min :
- 100 V
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Rds On (Max) @ Id, Vgs :
- 160mOhm @ 8.3A, 10V
- Drain-source On Resistance-Max :
- 0.16 Ω
- FET Feature :
- -
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 56 A
- Gate Charge (Qg) (Max) @ Vgs :
- 26 nC @ 10 V
- Drain Current-Max (Abs) (ID) :
- 12 A
- Current - Continuous Drain (Id) @ 25°C :
- 14A (Tc)
- FET Type :
- N-Channel
- Number of Terminals :
- 3
- Pin Count :
- 3 +Tab
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 69 mJ
- Package Type :
- TO-220
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate-Source Voltage (Max) :
- ±20(V)
- Subcategory :
- FET General Purpose Power
- Power Dissipation :
- 77(W)
- Package / Case :
- TO-220-3
- Datasheets
- NTE66

MOSFET (Metal Oxide) N-Channel 160mOhm @ 8.3A, 10V ±20V 640 pF @ 25 V 26 nC @ 10 V 100 V TO-220-3
NTE66 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 69 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 640 pF @ 25 V maximal input capacitance.A device can conduct a maximum continuous current of [12 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 56 A.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100 V drain to source voltage (Vdss).
NTE66 Features
the avalanche energy rating (Eas) is 69 mJ
based on its rated peak drain current 56 A.
a 100 V drain to source voltage (Vdss)
NTE66 Applications
There are a lot of NTE Electronics, Inc.
NTE66 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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