NTE2419

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power Dissipation-Max (Abs) :

0.2 W

Number of Terminals :

3

Resistor - Emitter Base (R2) :

47 kOhms

DC Current Gain-Min (hFE) :

50

Transistor Element Material :

SILICON

Collector-Emitter Voltage-Max :

50 V

RoHS :

Compliant

Voltage - Collector Emitter Breakdown (Max) :

50 V

Manufacturer :

NTE Electronics

Mounting Type :

Surface Mount

Number of Elements :

1

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Terminal Form :

Gull wing

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

Width :

101.6 mm

Supplier Device Package :

SOT-23

Transistor Application :

SWITCHING

Max Operating Temperature :

150 °C

Polarity/Channel Type :

PNP

Collector Current-Max (IC) :

0.1 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 5V

Series :

-

ECCN Code :

EAR99

Max Collector Current :

200 mA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Product Status :

Active

Mount :

Surface Mount

Min Operating Temperature :

-55 °C

Package :

Bag

Reach Compliance Code :

Unknown

Length :

165.1 mm

JESD-30 Code :

R-PDSO-G3

Qualification Status :

Not Qualified

Surface Mount :

yes

Weight :

4.535924 g

HTS Code :

8541.21.00.75

Subcategory :

BIP General Purpose Small Signal

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

6.35 mm

Frequency - Transition :

200 MHz

Power - Max :

200 mW

Element Configuration :

Single

Package Shape :

RECTANGULAR

Number of Pins :

3

Resistor - Base (R1) :

47 kOhms

Transistor Type :

PNP - Pre-Biased

Terminal Position :

Dual