NTE2369

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Power - Max :

300 mW

Height :

6.35 mm

Polarity/Channel Type :

NPN

Current - Collector (Ic) (Max) :

100 mA

Subcategory :

Other Transistors

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Current - Collector Cutoff (Max) :

500nA

Qualification Status :

Not Qualified

Collector-Emitter Voltage-Max :

50 V

Transistor Application :

SWITCHING

Number of Terminals :

3

ECCN Code :

EAR99

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

RoHS :

Compliant

Series :

-

Voltage - Collector Emitter Breakdown (Max) :

50 V

JESD-30 Code :

O-PBCY-T3

Reach Compliance Code :

Unknown

Package Shape :

Round

Supplier Device Package :

TO-92S

Package :

Bag

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA, 5V

Manufacturer :

NTE Electronics

HTS Code :

8541.21.00.75

Frequency - Transition :

250 MHz

Product Status :

Active

Terminal Position :

BOTTOM

Weight :

4.535924 g

Width :

101.6 mm

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Collector Current-Max (IC) :

0.1 A

Additional Feature :

DIGITAL, BUILT IN BIAS RESISTOR

Transistor Type :

NPN - Pre-Biased

DC Current Gain-Min (hFE) :

80

Length :

152.4 mm

Resistor - Base (R1) :

4.7 kOhms

Mounting Type :

Through Hole

Pin Count :

3

Package / Case :

TO-226-3, TO-92-3 Short Body

Resistor - Emitter Base (R2) :

4.7 kOhms

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

0.3 W