NTE2359

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Package Shape :

Round

Width :

76.2 mm

Max Operating Temperature :

150 °C

Package / Case :

TO-226-3, TO-92-3 Short Body

Resistor - Base (R1) :

47 kOhms

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 5mA, 5V

Mounting Type :

Through Hole

Manufacturer :

NTE Electronics

HTS Code :

8541.21.00.75

Element Configuration :

Single

Package :

Bag

Max Collector Current :

200 mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain-Min (hFE) :

50

Transistor Element Material :

SILICON

Collector-Emitter Voltage-Max :

50 V

Pin Count :

3

Surface Mount :

No

Power Dissipation-Max (Abs) :

0.3 W

Voltage - Collector Emitter Breakdown (Max) :

50 V

Reach Compliance Code :

Unknown

Transistor Type :

NPN - Pre-Biased

Number of Pins :

3

RoHS :

Compliant

Collector Current-Max (IC) :

0.1 A

Length :

152.4 mm

Weight :

7.257478 g

Current - Collector (Ic) (Max) :

100 mA

Mount :

Through Hole

Number of Terminals :

3

Number of Elements :

1

Transistor Application :

SWITCHING

Polarity :

NPN

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

O-PBCY-T3

Supplier Device Package :

TO-92S

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Polarity/Channel Type :

NPN

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Subcategory :

BIP General Purpose Small Signal

Product Status :

Active

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

500nA

Series :

-

Height :

12.7 mm

Qualification Status :

Not Qualified

Frequency - Transition :

250 MHz

Min Operating Temperature :

-55 °C

Power - Max :

300 mW

Resistor - Emitter Base (R2) :

47 kOhms