NTE2358

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain :

50

Power - Max :

300 mW

Typical Resistor Ratio :

1

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 5mA, 5V

Collector-Emitter Voltage-Max :

50 V

Package Shape :

Round

Package Type :

TO-92

HTS Code :

8541.21.00.75

Reach Compliance Code :

Unknown

Power Dissipation :

0.3(W)

Power Dissipation-Max (Abs) :

0.3 W

Current - Collector (Ic) (Max) :

100 mA

Frequency - Transition :

200 MHz

JESD-30 Code :

O-PBCY-T3

Number of Terminals :

3

Transistor Element Material :

SILICON

Collector Current (DC) :

0.2(A)

Manufacturer :

NTE Electronics

Surface Mount :

No

Polarity/Channel Type :

PNP

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

22 kOhms

Supplier Device Package :

TO-92S

Resistor - Base (R1) :

22 kOhms

Product Status :

Active

Series :

-

Emitter-Collector Voltage (Max) :

50(V)

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Package / Case :

TO-226-3, TO-92-3 Short Body

Transistor Type :

PNP - Pre-Biased

Number of Elements :

1

Collector Current-Max (IC) :

0.1 A

Mounting Type :

Through Hole

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

DC Current Gain-Min (hFE) :

50

Voltage - Collector Emitter Breakdown (Max) :

50 V

Package :

Bag

Subcategory :

BIP General Purpose Small Signal

Type :

PNP