NTE2357

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Mounting Type :

Through Hole

Frequency - Transition :

250 MHz

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

0.1 A

Package / Case :

TO-226-3, TO-92-3 Short Body

JESD-30 Code :

O-PBCY-T3

Polarity/Channel Type :

NPN

Number of Terminals :

3

Type :

NPN

Package Shape :

Round

Power Dissipation :

0.3(W)

Product Status :

Active

Pin Count :

3

Package :

Bag

Subcategory :

BIP General Purpose Small Signal

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 5mA, 5V

Configuration :

Single

HTS Code :

8541.21.00.75

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

50 V

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Current - Collector (Ic) (Max) :

100 mA

Supplier Device Package :

TO-92S

Typical Resistor Ratio :

1

Package Type :

TO-92

Power - Max :

300 mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain-Min (hFE) :

50

DC Current Gain :

50

Manufacturer :

NTE Electronics

ECCN Code :

EAR99

Resistor - Base (R1) :

22 kOhms

Terminal Form :

THROUGH-HOLE

Number of Elements :

1

Power Dissipation-Max (Abs) :

0.3 W

Transistor Type :

NPN - Pre-Biased

Collector-Emitter Voltage-Max :

50 V

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

22 kOhms

Current - Collector Cutoff (Max) :

500nA

Emitter-Collector Voltage (Max) :

50(V)

Reach Compliance Code :

Unknown

Surface Mount :

No

Series :

-

Terminal Position :

BOTTOM

Collector Current (DC) :

0.2(A)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA