NTE2356

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Frequency - Transition :

200 MHz

DC Current Gain :

50

Resistor - Base (R1) :

10 kOhms

Type :

PNP

Package Shape :

Round

Supplier Device Package :

TO-92S

Polarity/Channel Type :

PNP

Collector Current (DC) :

0.2(A)

Power - Max :

300 mW

Transistor Element Material :

SILICON

Package Type :

TO-92

Emitter-Collector Voltage (Max) :

50(V)

Collector-Emitter Voltage-Max :

50 V

HTS Code :

8541.21.00.75

Number of Terminals :

3

Current - Collector (Ic) (Max) :

100 mA

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

Transistor Type :

PNP - Pre-Biased

Package :

Bag

Power Dissipation :

0.3(W)

Power Dissipation-Max (Abs) :

0.3 W

Series :

-

Package / Case :

TO-226-3, TO-92-3 Short Body

ECCN Code :

EAR99

Number of Elements :

1

Terminal Position :

BOTTOM

Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Surface Mount :

No

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

50 V

Collector Current-Max (IC) :

0.1 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA, 5V

Product Status :

Active

JESD-30 Code :

O-PBCY-T3

Subcategory :

BIP General Purpose Small Signal

Pin Count :

3

Terminal Form :

THROUGH-HOLE

Resistor - Emitter Base (R2) :

10 kOhms

Typical Resistor Ratio :

1

DC Current Gain-Min (hFE) :

50

Manufacturer :

NTE Electronics

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA