NTB18N06T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

48.4W Tc

Number of Terminations :

2

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

15A Tc

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

61 mJ

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

45A

Rds On (Max) @ Id, Vgs :

90m Ω @ 7.5A, 10V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.09Ohm

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

15A

Pin Count :

3

Terminal Finish :

TIN LEAD

Peak Reflow Temperature (Cel) :

240

Pbfree Code :

No

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Drain to Source Voltage (Vdss) :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL