NTB18N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Mounting Type :

Surface Mount

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Lead Free :

Contains Lead

Drain-source On Resistance-Max :

0.09Ohm

Mount :

Surface Mount

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Fall Time (Typ) :

13 ns

Power Dissipation-Max :

48.4W Tc

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Vgs (Max) :

±20V

Turn-Off Delay Time :

14 ns

HTS Code :

8541.29.00.95

Voltage - Rated DC :

60V

Qualification Status :

Not Qualified

Rise Time :

25ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Current Rating :

15A

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

90m Ω @ 7.5A, 10V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

48.4W

Avalanche Energy Rating (Eas) :

61 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Pin Count :

3

Number of Pins :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

45A

FET Type :

N-Channel

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

15A

Published :

2005

Peak Reflow Temperature (Cel) :

235

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V