NTB10N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

500 mJ

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Surface Mount :

yes

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Operating Temperature (Max) :

150°C

Drain-source On Resistance-Max :

0.75Ohm

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

35A

JESD-609 Code :

e0

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Pin Count :

3

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

201W

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

10A

JESD-30 Code :

R-PSSO-G2

Number of Terminals :

2