NTB125N02RG
- Mfr.Part #
- NTB125N02RG
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 24V 95A/120.5A D2PAK
- Stock
- 36,532
- In Stock :
- 36,532
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 24V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Drain Current-Max (Abs) (ID) :
- 95A
- Continuous Drain Current (ID) :
- 120.5A
- Operating Temperature :
- -55°C~150°C TJ
- HTS Code :
- 8541.29.00.95
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Fall Time (Typ) :
- 21 ns
- Power Dissipation :
- 2.72W
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Rds On (Max) @ Id, Vgs :
- 4.6m Ω @ 20A, 10V
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 120 mJ
- Power Dissipation-Max :
- 1.98W Ta 113.6W Tc
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Lifecycle Status :
- Obsolete (Last Updated: 2 weeks ago)
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3440pF @ 20V
- Drain-source On Resistance-Max :
- 0.0062Ohm
- Pulsed Drain Current-Max (IDM) :
- 250A
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current Rating :
- 125A
- Turn-Off Delay Time :
- 27 ns
- Published :
- 2006
- Terminal Form :
- Gull wing
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 95A Ta 120.5A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- Rise Time :
- 39ns
- Drain to Source Breakdown Voltage :
- 24V
- Datasheets
- NTB125N02RG

N-Channel Tube 4.6m Ω @ 20A, 10V ±20V 3440pF @ 20V 28nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB125N02RG Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 120 mJ.A device's maximal input capacitance is 3440pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 120.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 24V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 95A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 27 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTB125N02RG Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 120.5A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 250A.
NTB125N02RG Applications
There are a lot of ON Semiconductor
NTB125N02RG applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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