NTB18N06L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Qualification Status :

Not Qualified

Packaging :

Tube

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.5A, 5V

Pin Count :

3

Power Dissipation-Max :

48.4W Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

240

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin/Lead (Sn/Pb)

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.1Ohm

Number of Terminations :

2

Terminal Form :

Gull wing

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

FET Type :

N-Channel

Vgs (Max) :

±10V

Avalanche Energy Rating (Eas) :

61 mJ

JESD-609 Code :

e0

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

60V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

15A Tc

JESD-30 Code :

R-PSSO-G2

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Published :

2005

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

15A

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Pulsed Drain Current-Max (IDM) :

45A