NTB13N10T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Rise Time :

40ns

Power Dissipation-Max :

64.7W Ta

Continuous Drain Current (ID) :

13A

Fall Time (Typ) :

36 ns

Number of Pins :

3

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

165m Ω @ 6.5A, 10V

Number of Terminations :

2

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Drain-source On Resistance-Max :

0.165Ohm

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

20 ns

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

85 mJ

Terminal Form :

Gull wing

Voltage - Rated DC :

100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

64.7W

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Transistor Element Material :

SILICON

Mount :

Surface Mount

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Current Rating :

13A

FET Type :

N-Channel

Published :

2005