NTB125N02RT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

250A

Qualification Status :

COMMERCIAL

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

95A

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

120 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

235

DS Breakdown Voltage-Min :

25V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN LEAD

Drain-source On Resistance-Max :

0.0062Ohm

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Pbfree Code :

No

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Case Connection :

DRAIN

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e0

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSSO-G2