NTB13N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

165m Ω @ 6.5A, 10V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

39A

Avalanche Energy Rating (Eas) :

85 mJ

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

No

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

DS Breakdown Voltage-Min :

100V

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Drain Current-Max (Abs) (ID) :

13A

Reach Compliance Code :

Unknown

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Power Dissipation-Max :

64.7W Ta

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Transistor Application :

SWITCHING

JESD-609 Code :

e3

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.165Ohm

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes