NTB18N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

61 mJ

Number of Terminations :

2

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

90m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

FET Type :

N-Channel

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Packaging :

Tube

Drain to Source Voltage (Vdss) :

60V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.09Ohm

Pin Count :

3

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Terminal Form :

Gull wing

Terminal Position :

Single

Power Dissipation-Max :

48.4W Tc

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

45A

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

60V

Drain Current-Max (Abs) (ID) :

15A

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA