NTB13N10G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Pulsed Drain Current-Max (IDM) :

39A

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

13A

Rds On (Max) @ Id, Vgs :

165m Ω @ 6.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

85 mJ

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

64.7W Ta

Pbfree Code :

No

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Case Connection :

DRAIN

Number of Elements :

1

Drain to Source Voltage (Vdss) :

100V

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Qualification Status :

COMMERCIAL

Terminal Form :

Gull wing

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain-source On Resistance-Max :

0.165Ohm

DS Breakdown Voltage-Min :

100V