NTB125N02R

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Current Rating :

125A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

95A

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Number of Elements :

1

Drain-source On Resistance-Max :

0.0062Ohm

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation-Max :

1.98W Ta 113.6W Tc

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

120 mJ

Pin Count :

3

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

39ns

Current - Continuous Drain (Id) @ 25°C :

95A Ta 120.5A Tc

JESD-609 Code :

e0

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

24V

Terminal Finish :

Tin/Lead (Sn/Pb)

Fall Time (Typ) :

21 ns

RoHS Status :

Non-RoHS Compliant

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

3440pF @ 20V

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

250A

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

235

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

120.5A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Number of Terminations :

2

Voltage - Rated DC :

24V

Published :

2006

Turn-Off Delay Time :

27 ns

Power Dissipation :

2.72W