NTB125N02RT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Voltage - Rated DC :

24V

JEDEC-95 Code :

TO-220AB

Drain to Source Breakdown Voltage :

24V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

1.98W Ta 113.6W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

3440pF @ 20V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

95A

Transistor Application :

SWITCHING

HTS Code :

8541.29.00.95

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 250μA

Current Rating :

125A

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

21 ns

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

95A Ta 120.5A Tc

Continuous Drain Current (ID) :

125A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

250A

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Terminal Form :

Gull wing

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

120 mJ

Lifecycle Status :

OBSOLETE (Last Updated: 4 days ago)

FET Type :

N-Channel

Qualification Status :

Not Qualified

Power Dissipation :

2.72W

Turn-Off Delay Time :

27 ns

Rise Time :

39ns

Drain-source On Resistance-Max :

0.0062Ohm