NTB18N06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

5V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Gate to Source Voltage (Vgs) :

10V

Current Rating :

15A

Published :

2005

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Element Configuration :

Single

Qualification Status :

Not Qualified

Rise Time :

121ns

Fall Time (Typ) :

42 ns

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±10V

Turn-Off Delay Time :

11 ns

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

60V

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

15A

Power Dissipation-Max :

48.4W Tc

Number of Terminations :

2

Lead Free :

Lead Free

ECCN Code :

EAR99

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.5A, 5V

Pulsed Drain Current-Max (IDM) :

45A

Mounting Type :

Surface Mount

Pbfree Code :

yes

Power Dissipation :

48.4W