NTB18N06LT4
- Mfr.Part #
- NTB18N06LT4
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 15A D2PAK
- Stock
- 21,509
- In Stock :
- 21,509
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 61 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 225
- Published :
- 2005
- Drain-source On Resistance-Max :
- 0.1Ohm
- Power Dissipation :
- 48.4W
- Continuous Drain Current (ID) :
- 15A
- RoHS Status :
- Non-RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Vgs (Max) :
- ±10V
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 121ns
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 7.5A, 5V
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 45A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ) :
- 42 ns
- Power Dissipation-Max :
- 48.4W Tc
- Current Rating :
- 15A
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Pin Count :
- 3
- Turn-Off Delay Time :
- 11 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- JESD-30 Code :
- R-PSSO-G2
- Voltage - Rated DC :
- 60V
- Case Connection :
- DRAIN
- Lead Free :
- Contains Lead
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 25V
- Transistor Application :
- SWITCHING
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Datasheets
- NTB18N06LT4
NTB18N06LT4 Documents

N-Channel Tape & Reel (TR) 100m Ω @ 7.5A, 5V ±10V 440pF @ 25V 20nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB18N06LT4 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 61 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 440pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 15A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 45A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.A device like this reduces its overall power consumption when it uses drive voltage (5V).
NTB18N06LT4 Features
the avalanche energy rating (Eas) is 61 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 11 ns
based on its rated peak drain current 45A.
NTB18N06LT4 Applications
There are a lot of ON Semiconductor
NTB18N06LT4 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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