NTB18N06LT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Gate to Source Voltage (Vgs) :

10V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.1Ohm

Fall Time (Typ) :

42 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Current Rating :

15A

Turn-Off Delay Time :

11 ns

Number of Terminations :

2

Terminal Finish :

Tin/Lead (Sn80Pb20)

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Drive Voltage (Max Rds On,Min Rds On) :

5V

Power Dissipation-Max :

48.4W Tc

Voltage - Rated DC :

60V

Number of Elements :

1

Continuous Drain Current (ID) :

15A

Peak Reflow Temperature (Cel) :

225

Vgs (Max) :

±10V

Pulsed Drain Current-Max (IDM) :

45A

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

60V

Published :

2005

Avalanche Energy Rating (Eas) :

61 mJ

Power Dissipation :

48.4W

Rise Time :

121ns

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Additional Feature :

LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Terminal Form :

Gull wing

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Pin Count :

3

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.5A, 5V

Transistor Application :

SWITCHING