NTB18N06LG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

JESD-609 Code :

e3

Power Dissipation-Max :

48.4W Tc

Qualification Status :

Not Qualified

Published :

2005

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.5A, 5V

Gate to Source Voltage (Vgs) :

10V

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

Voltage - Rated DC :

60V

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Rise Time :

121ns

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

48.4W

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

42 ns

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±10V

Pin Count :

3

Avalanche Energy Rating (Eas) :

61 mJ

Continuous Drain Current (ID) :

15A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current Rating :

15A

Packaging :

Tube

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

5V

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Number of Pins :

3

Case Connection :

DRAIN

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Pulsed Drain Current-Max (IDM) :

45A

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

11 ns

Drain to Source Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.1Ohm