MUN5230DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Operating Supply Voltage :

50V

Pin Count :

6

Lead Free :

Lead Free

Element Configuration :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Pbfree Code :

yes

hFE Min :

3

Collector Emitter Voltage (VCEO) :

50V

Polarity :

NPN

Length :

2.2mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

1.35mm

Surface Mount :

yes

Halogen Free :

Halogen Free

Current Rating :

100mA

Max Frequency :

10kHz

Resistor - Base (R1) :

1k Ω

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

Base Part Number :

MUN52**DW1T

Time@Peak Reflow Temperature-Max (s) :

40

Max Output Current :

100mA

Contact Plating :

Tin

Published :

2005

Emitter Base Voltage (VEBO) :

6V

ECCN Code :

EAR99

JESD-609 Code :

e3

Resistor - Emitter Base (R2) :

1k Ω

Voltage - Rated DC :

50V

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

50V

Max Collector Current :

100mA

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Max Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Factory Lead Time :

8 Weeks

Peak Reflow Temperature (Cel) :

260

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Terminations :

6

Mounting Type :

Surface Mount

Collector Emitter Saturation Voltage :

250mV

Max Power Dissipation :

250mW

Transistor Type :

2 NPN - Pre-Biased (Dual)

Power Dissipation :

187mW

Continuous Collector Current :

100mA

Height :

1mm

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA