MUN5215DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Terminal Form :

Gull wing

Max Output Current :

100mA

Number of Terminations :

6

Max Collector Current :

100mA

Collector Emitter Saturation Voltage :

250mV

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Pbfree Code :

yes

Width :

1.35mm

Lead Free :

Lead Free

Halogen Free :

Halogen Free

Pin Count :

6

ECCN Code :

EAR99

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Min Operating Temperature :

-55°C

Height :

1mm

Length :

2.2mm

Transistor Application :

SWITCHING

Published :

2005

hFE Min :

160

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

50V

Factory Lead Time :

8 Weeks

Surface Mount :

yes

Continuous Collector Current :

100mA

REACH SVHC :

No SVHC

Voltage - Rated DC :

50V

Resistor - Base (R1) :

10k Ω

Transistor Type :

2 NPN - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Dual

Additional Feature :

BUILT-IN BIAS RESISTOR

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Max Frequency :

10kHz

Polarity :

NPN

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Power Dissipation :

250mW

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Power Dissipation :

256mW

Operating Supply Voltage :

50V

Emitter Base Voltage (VEBO) :

6V

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Base Part Number :

MUN52**DW1T

Current Rating :

100mA