MUN5211T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Time@Peak Reflow Temperature-Max (s) :

40

Max Operating Temperature :

150°C

REACH SVHC :

No SVHC

Halogen Free :

Halogen Free

Continuous Collector Current :

100mA

Transistor Type :

NPN - Pre-Biased

Max Power Dissipation :

202mW

Lead Free :

Lead Free

Contact Plating :

Tin

Current Rating :

100mA

Radiation Hardening :

No

ECCN Code :

EAR99

Resistor - Base (R1) :

10 k Ω

Base Part Number :

MUN52**T

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Package / Case :

SC-70, SOT-323

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Terminations :

3

hFE Min :

35

Surface Mount :

yes

Published :

2006

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Terminal Position :

Dual

Voltage - Rated DC :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Number of Elements :

1

Factory Lead Time :

5 Weeks

Power Dissipation :

310mW

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Min Operating Temperature :

-55°C