MUN5135T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Surface Mount :

yes

Mounting Type :

Surface Mount

Min Operating Temperature :

-55°C

JESD-609 Code :

e3

ECCN Code :

EAR99

Package / Case :

SC-70, SOT-323

Base Part Number :

MUN51**T

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Peak Reflow Temperature (Cel) :

260

hFE Min :

80

Published :

2008

Resistor - Base (R1) :

2.2 k Ω

Pbfree Code :

yes

Max Power Dissipation :

202mW

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

Transistor Type :

PNP - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Polarity :

PNP

Radiation Hardening :

No

Terminal Form :

Gull wing

Operating Supply Voltage :

50V

Current Rating :

-100mA

Max Breakdown Voltage :

50V

Continuous Collector Current :

100mA

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

50V

Halogen Free :

Halogen Free

Transistor Application :

SWITCHING

Pin Count :

3

Number of Elements :

1

Terminal Position :

Dual

Resistor - Emitter Base (R2) :

47 k Ω

Power Dissipation :

202mW

Factory Lead Time :

4 Weeks

Max Output Current :

100mA

Voltage - Rated DC :

-50V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Operating Temperature :

150°C

Number of Terminations :

3