MUN5133T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

4.7 k Ω

Factory Lead Time :

11 Weeks

Min Operating Temperature :

-55°C

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Voltage - Rated DC :

-50V

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Polarity :

PNP

Resistor - Emitter Base (R2) :

47 k Ω

Max Breakdown Voltage :

50V

hFE Min :

80

Transistor Type :

PNP - Pre-Biased

RoHS Status :

ROHS3 Compliant

Published :

2009

Lead Free :

Lead Free

JESD-609 Code :

e3

Pin Count :

3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Continuous Collector Current :

100mA

Power Dissipation :

310mW

Package / Case :

SC-70, SOT-323

Collector Emitter Voltage (VCEO) :

50V

Current - Collector Cutoff (Max) :

500nA

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Current Rating :

-100mA

Terminal Position :

Dual

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Radiation Hardening :

No

Halogen Free :

Halogen Free

Number of Pins :

3

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

202mW

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Pbfree Code :

yes

Base Part Number :

MUN51**T

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Terminations :

3

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Terminal Form :

Gull wing