MUN5133T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Pbfree Code :

yes

Lead Free :

Lead Free

Terminal Form :

Gull wing

Published :

2009

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Resistor - Base (R1) :

4.7 k Ω

Power Dissipation :

310mW

Pin Count :

3

Resistor - Emitter Base (R2) :

47 k Ω

ECCN Code :

EAR99

Polarity :

PNP

Current Rating :

-100mA

Package / Case :

SC-70, SOT-323

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

PNP - Pre-Biased

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

JESD-609 Code :

e3

Number of Elements :

1

Halogen Free :

Halogen Free

Max Operating Temperature :

150°C

Number of Terminations :

3

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Surface Mount :

yes

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Base Part Number :

MUN51**T

Max Power Dissipation :

202mW

Continuous Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

50V

Element Configuration :

Single

hFE Min :

80

Factory Lead Time :

11 Weeks

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-50V

Max Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Mounting Type :

Surface Mount