MUN5116DW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Width :

1.25mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Peak Reflow Temperature (Cel) :

260

hFE Min :

160

Max Power Dissipation :

250mW

Terminal Finish :

Tin (Sn)

Pin Count :

6

Min Operating Temperature :

-55°C

Operating Supply Voltage :

50V

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Current - Collector Cutoff (Max) :

500nA

Continuous Collector Current :

-100mA

Surface Mount :

yes

Pbfree Code :

yes

Published :

2009

Voltage - Rated DC :

-50V

Element Configuration :

Dual

Resistor - Base (R1) :

4.7k Ω

Mounting Type :

Surface Mount

Max Output Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Length :

2mm

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

50V

Max Collector Current :

100mA

Number of Elements :

2

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Lead Free :

Lead Free

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Polarity :

PNP

Transistor Type :

2 PNP - Pre-Biased (Dual)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

JESD-609 Code :

e3

Number of Pins :

6

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

250mV

Current Rating :

-100mA

Factory Lead Time :

2 Weeks

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

MUN51**DW1T

Height :

900μm

Packaging :

Tape and Reel (TR)

Additional Feature :

BUILT-IN BIAS RESISTOR