MPSW63RLRAG

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Mfr.Part #
MPSW63RLRAG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A TO92
Stock
13,113
In Stock :
13,113

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Frequency - Transition :
125MHz
Qualification Status :
COMMERCIAL
Current - Collector Cutoff (Max) :
100nA ICBO
Current - Collector (Ic) (Max) :
500mA
JESD-30 Code :
O-PBCY-T3
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Type :
PNP - Darlington
Pbfree Code :
No
JESD-609 Code :
e1
RoHS Status :
ROHS3 Compliant
Terminal Position :
BOTTOM
Transition Frequency :
125MHz
Peak Reflow Temperature (Cel) :
260
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Surface Mount :
No
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Number of Terminations :
3
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Transistor Element Material :
SILICON
Voltage - Collector Emitter Breakdown (Max) :
30V
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Mounting Type :
Through Hole
Terminal Finish :
TIN SILVER COPPER
DC Current Gain (hFE) (Min) @ Ic, Vce :
10000 @ 100mA 5V
Power - Max :
1W
Datasheets
MPSW63RLRAG
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSW63RLRAG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type:Through Hole, MPSW63RLRAG pinout, MPSW63RLRAG datasheet PDF, MPSW63RLRAG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSW63RLRAG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSW63RLRAG


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole

MPSW63RLRAG Overview


In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.

MPSW63RLRAG Features


the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
a transition frequency of 125MHz


MPSW63RLRAG Applications


There are a lot of Rochester Electronics, LLC
MPSW63RLRAG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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