MPSW51ARLRP

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

30

Lead Free :

Contains Lead

hFE Min :

55

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

JESD-30 Code :

O-PBCY-T3

Polarity/Channel Type :

PNP

Gain Bandwidth Product :

50MHz

Terminal Position :

BOTTOM

ECCN Code :

EAR99

HTS Code :

8541.29.00.75

Reach Compliance Code :

not_compliant

Transistor Type :

PNP

Emitter Base Voltage (VEBO) :

5V

Mount :

Through Hole

Base Part Number :

MPSW51A

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Collector Emitter Breakdown Voltage :

40V

Current - Collector Cutoff (Max) :

100nA ICBO

Current - Collector (Ic) (Max) :

1A

Current Rating :

-1A

Max Collector Current :

1A

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 100mA 1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1W

RoHS Status :

Non-RoHS Compliant

Published :

2009

Number of Elements :

1

Transition Frequency :

50MHz

Vce Saturation (Max) @ Ib, Ic :

700mV @ 100mA, 1A

Collector Base Voltage (VCBO) :

-50V

Collector Emitter Saturation Voltage :

-700mV

JESD-609 Code :

e0

Voltage - Rated DC :

-40V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Box (TB)

Collector Emitter Voltage (VCEO) :

700mV

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

240