MPSW45RLRE
- Mfr.Part #
- MPSW45RLRE
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 40V 1A TO92
- Stock
- 48,381
- In Stock :
- 48,381
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Contains Lead
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Mounting Type :
- Through Hole
- hFE Min :
- 25000
- Continuous Collector Current :
- 1A
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN - Darlington
- Mount :
- Through Hole
- Max Collector Current :
- 1A
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- MPSW45
- Number of Terminations :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 240
- Polarity :
- NPN
- Published :
- 2009
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 1A
- Emitter Base Voltage (VEBO) :
- 12V
- Transition Frequency :
- 100MHz
- Power Dissipation :
- 1W
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Voltage - Rated DC :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e0
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25000 @ 200mA 5V
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- JESD-30 Code :
- O-PBCY-T3
- Frequency - Transition :
- 100MHz
- HTS Code :
- 8541.29.00.75
- Current Rating :
- 1A
- Datasheets
- MPSW45RLRE
,TO-226_bentlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW45RLRE Overview
This device has a DC current gain of 25000 @ 200mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 2mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 1A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 1A volts is possible.
MPSW45RLRE Features
the DC current gain for this device is 25000 @ 200mA 5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPSW45RLRE Applications
There are a lot of ON Semiconductor
MPSW45RLRE applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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