MPSW45ARLRAG
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- Mfr.Part #
- MPSW45ARLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 50V 1A TO92
- Stock
- 11,658
- In Stock ：
- 11,658
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25000 @ 200mA 5V
- Power Dissipation :
- 1W
- Length :
- 6.35mm
- Max Breakdown Voltage :
- 50V
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Published :
- 2006
- Emitter Base Voltage (VEBO) :
- 12V
- Polarity :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MPSW45A
- Max Collector Current :
- 1A
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transition Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Width :
- 25.4mm
- Voltage - Rated DC :
- 50V
- Surface Mount :
- No
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- RoHS Status :
- RoHS Compliant
- Frequency - Transition :
- 100MHz
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 1W
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 1A
- Collector Emitter Saturation Voltage :
- 1.5V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- Height :
- 6.35mm
- Pin Count :
- 3
- hFE Min :
- 4000
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 1A
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MPSW45ARLRAG
,TO-226_bentlead.jpg)
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Reel (TR) Through Hole
MPSW45ARLRAG Overview
This device has a DC current gain of 25000 @ 200mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.A VCE saturation (Max) of 1.5V @ 2mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 1A volts is possible.
MPSW45ARLRAG Features
the DC current gain for this device is 25000 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 1A
a transition frequency of 100MHz
MPSW45ARLRAG Applications
There are a lot of ON Semiconductor
MPSW45ARLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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