MPS3646RLRAG
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- Mfr.Part #
- MPS3646RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.3A TO92
- Stock
- 36,018
- In Stock ：
- 36,018
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Turn On Time-Max (ton) :
- 18ns
- Max Power Dissipation :
- 625mW
- Transition Frequency :
- 350MHz
- RoHS Status :
- RoHS Compliant
- Voltage - Rated DC :
- 15V
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 40V
- hFE Min :
- 30
- Collector Emitter Voltage (VCEO) :
- 500mV
- Published :
- 2006
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Current - Collector Cutoff (Max) :
- 500nA
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- Qualification Status :
- Not Qualified
- Base Part Number :
- MPS3646
- Transistor Application :
- SWITCHING
- HTS Code :
- 8541.21.00.75
- Max Collector Current :
- 300mA
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 300mA
- Gain Bandwidth Product :
- 350MHz
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 15V
- Turn Off Time-Max (toff) :
- 28ns
- Datasheets
- MPS3646RLRAG
NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS3646RLRAG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 30mA 400mV.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 30mA, 300mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 350MHz.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
MPS3646RLRAG Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz
MPS3646RLRAG Applications
There are a lot of ON Semiconductor
MPS3646RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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