MPS3646RLRAG
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- Mfr.Part #
- MPS3646RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.3A TO92
- Stock
- 36,018
- In Stock ：
- 36,018
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Voltage - Rated DC :
- 15V
- Collector Base Voltage (VCBO) :
- 40V
- Number of Terminations :
- 3
- Max Collector Current :
- 300mA
- Collector Emitter Breakdown Voltage :
- 15V
- Turn Off Time-Max (toff) :
- 28ns
- Transistor Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- hFE Min :
- 30
- HTS Code :
- 8541.21.00.75
- Transistor Application :
- SWITCHING
- Turn On Time-Max (ton) :
- 18ns
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 350MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Reach Compliance Code :
- Unknown
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 500mV
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 500nA
- Transition Frequency :
- 350MHz
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 500mV
- Pin Count :
- 3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MPS3646
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Published :
- 2006
- Max Power Dissipation :
- 625mW
- Current Rating :
- 300mA
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Datasheets
- MPS3646RLRAG
MPS3646RLRAG Documents
NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS3646RLRAG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 30mA 400mV.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 30mA, 300mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 350MHz.Single BJT transistor is possible to have a collector current as low as 300mA volts at Single BJT transistors maximum.
MPS3646RLRAG Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz
MPS3646RLRAG Applications
There are a lot of ON Semiconductor
MPS3646RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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