MPS3638A
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- Mfr.Part #
- MPS3638A
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A TO92
- Stock
- 45,566
- In Stock ：
- 45,566
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 1V
- Packaging :
- Bulk
- Turn On Time-Max (ton) :
- 75ns
- Turn Off Time-Max (toff) :
- 170ns
- Collector Base Voltage (VCBO) :
- -25V
- Pbfree Code :
- yes
- Published :
- 2006
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Breakdown Voltage :
- 25V
- Emitter Base Voltage (VEBO) :
- 4V
- Pin Count :
- 3
- Mount :
- Through Hole
- Max Power Dissipation :
- 625mW
- HTS Code :
- 8541.21.00.75
- Voltage - Rated DC :
- -25V
- Collector Emitter Saturation Voltage :
- -1V
- Terminal Position :
- BOTTOM
- Current Rating :
- -500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Number of Pins :
- 3
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 300mA 2V
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Transition Frequency :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 35nA
- Element Configuration :
- Single
- hFE Min :
- 80
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 500mA
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 30mA, 300mA
- Datasheets
- MPS3638A
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 35nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS3638AG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 300mA 2V.With a collector emitter saturation voltage of -1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 30mA, 300mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 150MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MPS3638AG Features
the DC current gain for this device is 20 @ 300mA 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 30mA, 300mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 150MHz
MPS3638AG Applications
There are a lot of ON Semiconductor
MPS3638AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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