MPS3563RLRA
- Mfr.Part #
- MPS3563RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR
- Stock
- 6,000
- In Stock :
- 6,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Manufacturer Lifecycle Status :
- Obsolete (Last Updated: 2 years ago)
- Transistor Type :
- NPN
- JESD-609 Code :
- e1
- Frequency - Transition :
- 600MHz
- Collector Base Voltage (VCBO) :
- 30 V
- Terminal Finish :
- TIN SILVER COPPER
- Element Configuration :
- Single
- Max Power Dissipation :
- 350 mW
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 8mA, 10V
- Product Status :
- Active
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Transistor Element Material :
- SILICON
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY BAND
- JEDEC-95 Code :
- TO-92
- Configuration :
- Single
- Number of Terminals :
- 3
- Number of Elements :
- 1
- Power - Max :
- 350 mW
- Manufacturer :
- Rochester Electronics LLC
- Supplier Device Package :
- TO-92 (TO-226)
- Qualification Status :
- COMMERCIAL
- Collector Emitter Saturation Voltage :
- 400 mV
- Number of Pins :
- 3
- Package :
- Bulk
- Current - Collector (Ic) (Max) :
- 50 mA
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- -
- Collector-Emitter Voltage-Max :
- 12 V
- Surface Mount :
- No
- Series :
- -
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- 2 V
- Lifecycle Status :
- Obsolete (Last Updated: 2 years ago)
- Terminal Form :
- THROUGH-HOLE
- Pin Count :
- 3
- RoHS :
- Compliant
- Gain Bandwidth Product :
- 1.5 GHz
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55 °C
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 10nA (ICBO)
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Collector Emitter Breakdown (Max) :
- 12 V
- Base Product Number :
- MPS356
- Max Collector Current :
- 50 mA
- Collector-Base Capacitance-Max :
- 1.7 pF
- Pbfree Code :
- yes
- hFE Min :
- 20
- Collector Current-Max (IC) :
- 0.05 A
- JESD-30 Code :
- O-PBCY-T3
- Polarity/Channel Type :
- NPN
- Reach Compliance Code :
- Unknown
- Max Operating Temperature :
- 150 °C
- Package Shape :
- Round
- Collector Emitter Voltage (VCEO) :
- 12 V
- Datasheets
- MPS3563RLRA

NPN -55°C ~ 150°C (TJ) 10nA (ICBO) 1 Elements SILICON NPN TO-226-3, TO-92-3 Long Body Through Hole
MPS3563RLRAG Overview
DC current gain in this device equals 20 @ 8mA, 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400 mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is -.An emitter's base voltage can be kept at 2 V to gain high efficiency.Product comes in TO-92 (TO-226) supplier package.Maximal collector-emitter voltage can be set at 12 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 50 mA volts.
MPS3563RLRAG Features
the DC current gain for this device is 20 @ 8mA, 10V
a collector emitter saturation voltage of 400 mV
the vce saturation(Max) is -
the emitter base voltage is kept at 2 V
the supplier device package of TO-92 (TO-226)
MPS3563RLRAG Applications
There are a lot of onsemi
MPS3563RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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