MPS3563RLRA

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Mfr.Part #
MPS3563RLRA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Stock
6,000
In Stock :
6,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Manufacturer Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Transistor Type :
NPN
JESD-609 Code :
e1
Frequency - Transition :
600MHz
Collector Base Voltage (VCBO) :
30 V
Terminal Finish :
TIN SILVER COPPER
Element Configuration :
Single
Max Power Dissipation :
350 mW
Transistor Application :
AMPLIFIER
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 8mA, 10V
Product Status :
Active
Package / Case :
TO-226-3, TO-92-3 Long Body
Transistor Element Material :
SILICON
Highest Frequency Band :
ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code :
TO-92
Configuration :
Single
Number of Terminals :
3
Number of Elements :
1
Power - Max :
350 mW
Manufacturer :
Rochester Electronics LLC
Supplier Device Package :
TO-92 (TO-226)
Qualification Status :
COMMERCIAL
Collector Emitter Saturation Voltage :
400 mV
Number of Pins :
3
Package :
Bulk
Current - Collector (Ic) (Max) :
50 mA
Operating Temperature :
-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic :
-
Collector-Emitter Voltage-Max :
12 V
Surface Mount :
No
Series :
-
Polarity :
NPN
Emitter Base Voltage (VEBO) :
2 V
Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Terminal Form :
THROUGH-HOLE
Pin Count :
3
RoHS :
Compliant
Gain Bandwidth Product :
1.5 GHz
Mounting Type :
Through Hole
Lead Free :
Lead Free
Min Operating Temperature :
-55 °C
Terminal Position :
BOTTOM
Current - Collector Cutoff (Max) :
10nA (ICBO)
Peak Reflow Temperature (Cel) :
260
Voltage - Collector Emitter Breakdown (Max) :
12 V
Base Product Number :
MPS356
Max Collector Current :
50 mA
Collector-Base Capacitance-Max :
1.7 pF
Pbfree Code :
yes
hFE Min :
20
Collector Current-Max (IC) :
0.05 A
JESD-30 Code :
O-PBCY-T3
Polarity/Channel Type :
NPN
Reach Compliance Code :
Unknown
Max Operating Temperature :
150 °C
Package Shape :
Round
Collector Emitter Voltage (VCEO) :
12 V
Datasheets
MPS3563RLRA
Introducing Transistors - Bipolar (BJT) - Single onsemi MPS3563RLRA from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 Long Body, Number of Pins:3, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, MPS3563RLRA pinout, MPS3563RLRA datasheet PDF, MPS3563RLRA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPS3563RLRA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPS3563RLRA


NPN -55°C ~ 150°C (TJ) 10nA (ICBO) 1 Elements SILICON NPN TO-226-3, TO-92-3 Long Body Through Hole

MPS3563RLRAG Overview


DC current gain in this device equals 20 @ 8mA, 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400 mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is -.An emitter's base voltage can be kept at 2 V to gain high efficiency.Product comes in TO-92 (TO-226) supplier package.Maximal collector-emitter voltage can be set at 12 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 50 mA volts.

MPS3563RLRAG Features


the DC current gain for this device is 20 @ 8mA, 10V
a collector emitter saturation voltage of 400 mV
the vce saturation(Max) is -
the emitter base voltage is kept at 2 V
the supplier device package of TO-92 (TO-226)


MPS3563RLRAG Applications


There are a lot of onsemi
MPS3563RLRAG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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