MPS3638AG
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- Mfr.Part #
- MPS3638AG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A TO92
- Stock
- 31,073
- In Stock ：
- 31,073
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Base Voltage (VCBO) :
- -25V
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 4V
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 150MHz
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Power Dissipation :
- 625mW
- Collector Emitter Breakdown Voltage :
- 25V
- Mounting Type :
- Through Hole
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Current - Collector (Ic) (Max) :
- 500mA
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Turn Off Time-Max (toff) :
- 170ns
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Published :
- 2006
- Collector Emitter Voltage (VCEO) :
- 1V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 30mA, 300mA
- Collector Emitter Saturation Voltage :
- -1V
- Transition Frequency :
- 150MHz
- Packaging :
- Bulk
- Element Configuration :
- Single
- Current Rating :
- -500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 500mA
- Current - Collector Cutoff (Max) :
- 35nA
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time-Max (ton) :
- 75ns
- hFE Min :
- 80
- Voltage - Rated DC :
- -25V
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 300mA 2V
- HTS Code :
- 8541.21.00.75
- Polarity/Channel Type :
- PNP
- Datasheets
- MPS3638AG
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 35nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS3638AG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 300mA 2V.With a collector emitter saturation voltage of -1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 30mA, 300mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 150MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MPS3638AG Features
the DC current gain for this device is 20 @ 300mA 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 30mA, 300mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 150MHz
MPS3638AG Applications
There are a lot of ON Semiconductor
MPS3638AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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