MPS3638AG
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- Mfr.Part #
- MPS3638AG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A TO92
- Stock
- 31,073
- In Stock ：
- 31,073
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -500mA
- Transistor Type :
- PNP
- Qualification Status :
- Not Qualified
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 1V
- Pin Count :
- 3
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- -25V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 30mA, 300mA
- Transition Frequency :
- 150MHz
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -25V
- HTS Code :
- 8541.21.00.75
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 500mA
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -1V
- Number of Pins :
- 3
- Turn On Time-Max (ton) :
- 75ns
- Polarity/Channel Type :
- PNP
- Turn Off Time-Max (toff) :
- 170ns
- Collector Emitter Breakdown Voltage :
- 25V
- hFE Min :
- 80
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Published :
- 2006
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 35nA
- Gain Bandwidth Product :
- 150MHz
- Emitter Base Voltage (VEBO) :
- 4V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 300mA 2V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Current - Collector (Ic) (Max) :
- 500mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Datasheets
- MPS3638AG
MPS3638AG Documents
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 35nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS3638AG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 300mA 2V.With a collector emitter saturation voltage of -1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 30mA, 300mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 150MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
MPS3638AG Features
the DC current gain for this device is 20 @ 300mA 2V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 30mA, 300mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 150MHz
MPS3638AG Applications
There are a lot of ON Semiconductor
MPS3638AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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