MPS3646
- Mfr.Part #
- MPS3646
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.3A TO92
- Stock
- 46,682
- In Stock :
- 46,682
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Turn Off Time-Max (toff) :
- 28ns
- REACH SVHC :
- Unknown
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 500nA
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Max Collector Current :
- 300mA
- hFE Min :
- 30
- Voltage - Rated DC :
- 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging :
- Bulk
- HTS Code :
- 8541.21.00.75
- Mount :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Collector Base Voltage (VCBO) :
- 40V
- Lead Free :
- Contains Lead
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 15V
- Current Rating :
- 300mA
- Number of Pins :
- 3
- Transition Frequency :
- 350MHz
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e0
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 240
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 500mV
- Gain Bandwidth Product :
- 350MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Time-Max (ton) :
- 18ns
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 625mW
- Base Part Number :
- MPS3646
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- MPS3646
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS3646 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 30 @ 30mA 400mV.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 30mA, 300mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 350MHz.During maximum operation, collector current can be as low as 300mA volts.
MPS3646 Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz
MPS3646 Applications
There are a lot of ON Semiconductor
MPS3646 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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