MPS3646G

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Mfr.Part #
MPS3646G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 15V 0.3A TO92
Stock
20,837
In Stock :
20,837

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Vce Saturation (Max) @ Ib, Ic :
500mV @ 30mA, 300mA
Max Power Dissipation :
625mW
Lifecycle Status :
OBSOLETE (Last Updated: 1 week ago)
Terminal Position :
BOTTOM
Transistor Element Material :
SILICON
Power Dissipation :
625mW
Collector Emitter Breakdown Voltage :
15V
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
40
Element Configuration :
Single
Collector Base Voltage (VCBO) :
40V
Current - Collector Cutoff (Max) :
500nA
Mount :
Through Hole
Max Collector Current :
300mA
Collector Emitter Saturation Voltage :
500mV
Gain Bandwidth Product :
350MHz
Published :
2006
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
NPN
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
15V
Number of Terminations :
3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Frequency :
350MHz
hFE Min :
30
Packaging :
Bulk
Transistor Application :
SWITCHING
Voltage - Rated DC :
15V
Number of Elements :
1
Mounting Type :
Through Hole
Peak Reflow Temperature (Cel) :
260
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
300mA
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 30mA 400mV
Turn Off Time-Max (toff) :
28ns
Polarity/Channel Type :
NPN
Base Part Number :
MPS3646
Emitter Base Voltage (VEBO) :
5V
JESD-609 Code :
e1
Transition Frequency :
350MHz
ECCN Code :
EAR99
Introducing Transistors - Bipolar (BJT) - Single onsemi MPS3646G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Base Part Number:MPS3646, MPS3646G pinout, MPS3646G datasheet PDF, MPS3646G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPS3646G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPS3646G


NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

MPS3646G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 30mA 400mV.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 30mA, 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 300mA.A transition frequency of 350MHz is present in the part.Collector current can be as low as 300mA volts at its maximum.

MPS3646G Features


the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz


MPS3646G Applications


There are a lot of ON Semiconductor
MPS3646G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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