MPS3646G
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- Mfr.Part #
- MPS3646G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.3A TO92
- Stock
- 20,837
- In Stock ：
- 20,837
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2006
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Gain Bandwidth Product :
- 350MHz
- hFE Min :
- 30
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 15V
- Transition Frequency :
- 350MHz
- Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 40V
- Turn Off Time-Max (toff) :
- 28ns
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- Current Rating :
- 300mA
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Rated DC :
- 15V
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- Base Part Number :
- MPS3646
- Frequency :
- 350MHz
- Collector Emitter Breakdown Voltage :
- 15V
- Current - Collector Cutoff (Max) :
- 500nA
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 300mA
- Datasheets
- MPS3646G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS3646G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 30mA 400mV.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 30mA, 300mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 300mA.A transition frequency of 350MHz is present in the part.Collector current can be as low as 300mA volts at its maximum.
MPS3646G Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz
MPS3646G Applications
There are a lot of ON Semiconductor
MPS3646G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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