MPS3563RLRAG

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Mfr.Part #
MPS3563RLRAG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
SMALL SIGNAL BIPOLAR TRANSISTOR
Stock
6,000
In Stock :
6,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Max Power Dissipation :
350 mW
Terminal Position :
BOTTOM
Number of Pins :
3
Emitter Base Voltage (VEBO) :
2 V
Polarity :
NPN
Collector Base Voltage (VCBO) :
30 V
Voltage - Collector Emitter Breakdown (Max) :
12 V
Terminal Form :
THROUGH-HOLE
Min Operating Temperature :
-55 °C
Gain Bandwidth Product :
1.5 GHz
Manufacturer Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Collector Current-Max (IC) :
0.05 A
Base Product Number :
MPS356
JEDEC-95 Code :
TO-92
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 8mA, 10V
Package :
Bulk
Collector Emitter Voltage (VCEO) :
12 V
hFE Min :
20
Manufacturer :
Rochester Electronics LLC
Number of Terminals :
3
JESD-30 Code :
O-PBCY-T3
Pbfree Code :
yes
JESD-609 Code :
e1
Package / Case :
TO-226-3, TO-92-3 Long Body
RoHS :
Compliant
Package Shape :
Round
Peak Reflow Temperature (Cel) :
260
Series :
-
Collector-Base Capacitance-Max :
1.7 pF
Current - Collector (Ic) (Max) :
50 mA
Product Status :
Active
Operating Temperature :
-55°C ~ 150°C (TJ)
Supplier Device Package :
TO-92 (TO-226)
Collector-Emitter Voltage-Max :
12 V
Reach Compliance Code :
Unknown
Collector Emitter Saturation Voltage :
400 mV
Number of Elements :
1
Lifecycle Status :
Obsolete (Last Updated: 2 years ago)
Qualification Status :
COMMERCIAL
Frequency - Transition :
600MHz
Pin Count :
3
Lead Free :
Lead Free
Configuration :
Single
Mounting Type :
Through Hole
Highest Frequency Band :
ULTRA HIGH FREQUENCY BAND
Power - Max :
350 mW
Max Collector Current :
50 mA
Terminal Finish :
TIN SILVER COPPER
Surface Mount :
No
Transistor Application :
AMPLIFIER
Transistor Type :
NPN
Max Operating Temperature :
150 °C
Vce Saturation (Max) @ Ib, Ic :
-
Element Configuration :
Single
Introducing Transistors - Bipolar (BJT) - Single onsemi MPS3563RLRAG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-226-3, TO-92-3 Long Body, Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, MPS3563RLRAG pinout, MPS3563RLRAG datasheet PDF, MPS3563RLRAG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPS3563RLRAG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPS3563RLRAG


NPN -55°C ~ 150°C (TJ) 10nA (ICBO) 1 Elements SILICON NPN TO-226-3, TO-92-3 Long Body Through Hole

MPS3563RLRAG Overview


DC current gain in this device equals 20 @ 8mA, 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400 mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is -.An emitter's base voltage can be kept at 2 V to gain high efficiency.Product comes in TO-92 (TO-226) supplier package.Maximal collector-emitter voltage can be set at 12 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 50 mA volts.

MPS3563RLRAG Features


the DC current gain for this device is 20 @ 8mA, 10V
a collector emitter saturation voltage of 400 mV
the vce saturation(Max) is -
the emitter base voltage is kept at 2 V
the supplier device package of TO-92 (TO-226)


MPS3563RLRAG Applications


There are a lot of onsemi
MPS3563RLRAG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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