MPS3563RLRAG
- Mfr.Part #
- MPS3563RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- SMALL SIGNAL BIPOLAR TRANSISTOR
- Stock
- 6,000
- In Stock :
- 6,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bulk
- Series :
- -
- Min Operating Temperature :
- -55 °C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 8mA, 10V
- Collector-Emitter Voltage-Max :
- 12 V
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- Product Status :
- Active
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Polarity/Channel Type :
- NPN
- Collector Current-Max (IC) :
- 0.05 A
- Manufacturer Lifecycle Status :
- Obsolete (Last Updated: 2 years ago)
- Polarity :
- NPN
- hFE Min :
- 20
- Current - Collector Cutoff (Max) :
- 10nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic :
- -
- Max Operating Temperature :
- 150 °C
- Collector Emitter Saturation Voltage :
- 400 mV
- Configuration :
- Single
- JEDEC-95 Code :
- TO-92
- RoHS :
- Compliant
- Transistor Application :
- AMPLIFIER
- Voltage - Collector Emitter Breakdown (Max) :
- 12 V
- Emitter Base Voltage (VEBO) :
- 2 V
- Terminal Finish :
- TIN SILVER COPPER
- Max Collector Current :
- 50 mA
- Mounting Type :
- Through Hole
- Base Product Number :
- MPS356
- Collector Emitter Voltage (VCEO) :
- 12 V
- JESD-30 Code :
- O-PBCY-T3
- Pbfree Code :
- yes
- Lifecycle Status :
- Obsolete (Last Updated: 2 years ago)
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Frequency - Transition :
- 600MHz
- Terminal Position :
- BOTTOM
- Number of Terminals :
- 3
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Peak Reflow Temperature (Cel) :
- 260
- Supplier Device Package :
- TO-92 (TO-226)
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 30 V
- Package Shape :
- Round
- Gain Bandwidth Product :
- 1.5 GHz
- Terminal Form :
- THROUGH-HOLE
- Collector-Base Capacitance-Max :
- 1.7 pF
- Qualification Status :
- COMMERCIAL
- Highest Frequency Band :
- ULTRA HIGH FREQUENCY BAND
- Manufacturer :
- Rochester Electronics LLC
- Power - Max :
- 350 mW
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 350 mW
- Current - Collector (Ic) (Max) :
- 50 mA
- Number of Elements :
- 1
- Datasheets
- MPS3563RLRAG

NPN -55°C ~ 150°C (TJ) 10nA (ICBO) 1 Elements SILICON NPN TO-226-3, TO-92-3 Long Body Through Hole
MPS3563RLRAG Overview
DC current gain in this device equals 20 @ 8mA, 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400 mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is -.An emitter's base voltage can be kept at 2 V to gain high efficiency.Product comes in TO-92 (TO-226) supplier package.Maximal collector-emitter voltage can be set at 12 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 50 mA volts.
MPS3563RLRAG Features
the DC current gain for this device is 20 @ 8mA, 10V
a collector emitter saturation voltage of 400 mV
the vce saturation(Max) is -
the emitter base voltage is kept at 2 V
the supplier device package of TO-92 (TO-226)
MPS3563RLRAG Applications
There are a lot of onsemi
MPS3563RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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