MPS3646RLRA
- Mfr.Part #
- MPS3646RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.3A TO92
- Stock
- 30,203
- In Stock :
- 30,203
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 40V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Max Power Dissipation :
- 625mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Frequency :
- 350MHz
- Current - Collector Cutoff (Max) :
- 500nA
- Collector Emitter Voltage (VCEO) :
- 15V
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Turn Off Time-Max (toff) :
- 28ns
- Transition Frequency :
- 350MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 15V
- Gain Bandwidth Product :
- 350MHz
- Peak Reflow Temperature (Cel) :
- 240
- Power Dissipation :
- 625mW
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 300mA
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Terminal Position :
- BOTTOM
- hFE Min :
- 30
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Voltage - Rated DC :
- 15V
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Base Part Number :
- MPS3646
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 400mV
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 3
- Max Collector Current :
- 300mA
- ECCN Code :
- EAR99
- Lead Free :
- Contains Lead
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- Datasheets
- MPS3646RLRA
MPS3646RLRA Documents

NPN -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS3646RLRA Overview
DC current gain in this device equals 30 @ 30mA 400mV, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 30mA, 300mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 300mA current rating.As a result, the part has a transition frequency of 350MHz.In extreme cases, the collector current can be as low as 300mA volts.
MPS3646RLRA Features
the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 350MHz
MPS3646RLRA Applications
There are a lot of ON Semiconductor
MPS3646RLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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