MPS3563

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA 10V

Mounting Type :

Through Hole

Element Configuration :

Single

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

2V

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

350W

Collector Emitter Voltage (VCEO) :

12V

Collector Emitter Saturation Voltage :

400mV

Collector Emitter Breakdown Voltage :

12V

Polarity/Channel Type :

NPN

Time@Peak Reflow Temperature-Max (s) :

30

Collector-Base Capacitance-Max :

1.7pF

Gain Bandwidth Product :

1.5 GHz

Reach Compliance Code :

not_compliant

Collector Base Voltage (VCBO) :

30V

Transistor Element Material :

SILICON

Number of Elements :

1

Noise Figure (dB Typ @ f) :

6.5dB @ 60MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

850mW

Current Rating :

50mA

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Qualification Status :

Not Qualified

JESD-609 Code :

e0

Transistor Application :

AMPLIFIER

Number of Terminations :

3

JESD-30 Code :

O-PBCY-T3

Lead Free :

Contains Lead

Max Collector Current :

50mA

Voltage - Rated DC :

12V

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

240

Packaging :

Bulk

Pin Count :

3

hFE Min :

20

Transition Frequency :

1500MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Published :

2006

Gain :

14dB @ 200MHz

Terminal Finish :

Tin/Lead (Sn/Pb)

HTS Code :

8541.21.00.75

ECCN Code :

EAR99