MPS3563G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Current Rating :

50mA

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

OBSOLETE (Last Updated: 1 day ago)

Max Power Dissipation :

350W

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Voltage - Rated DC :

12V

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Mounting Type :

Through Hole

Packaging :

Bulk

Published :

2006

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector-Base Capacitance-Max :

1.7pF

JESD-609 Code :

e1

Transition Frequency :

1500MHz

Transistor Application :

AMPLIFIER

Pbfree Code :

yes

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Noise Figure (dB Typ @ f) :

6.5dB @ 60MHz

Transistor Element Material :

SILICON

HTS Code :

8541.21.00.75

Collector Emitter Voltage (VCEO) :

12V

Gain Bandwidth Product :

1.5 GHz

Emitter Base Voltage (VEBO) :

2V

Power Dissipation :

850mW

Lead Free :

Lead Free

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Number of Elements :

1

Number of Pins :

3

hFE Min :

20

Max Collector Current :

50mA

Collector Emitter Breakdown Voltage :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 8mA 10V

Polarity/Channel Type :

NPN

Terminal Position :

BOTTOM

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Collector Emitter Saturation Voltage :

400mV

Collector Base Voltage (VCBO) :

30V

Gain :

14dB @ 200MHz