MMUN2236LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

246mW

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

100 k Ω

Power - Max :

246mW

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Transistor Element Material :

SILICON

hFE Min :

80

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

NPN - Pre-Biased

JESD-609 Code :

e3

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Current - Collector Cutoff (Max) :

500nA

Number of Elements :

1

Pin Count :

3

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

100 k Ω

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

250mV

Surface Mount :

yes

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Factory Lead Time :

2 Weeks

Published :

2013

Number of Terminations :

3