MMUN2234LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.14

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Terminal Position :

Dual

Number of Pins :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Operating Temperature :

150°C

JESD-609 Code :

e3

hFE Min :

80

Resistor - Base (R1) :

22 k Ω

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

47 k Ω

Voltage - Rated DC :

50V

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

yes

Element Configuration :

Single

Pbfree Code :

yes

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Power Dissipation :

246mW

Factory Lead Time :

4 Weeks

Continuous Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Current Rating :

100mA

Radiation Hardening :

No

Max Collector Current :

100mA

Max Power Dissipation :

246mW

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

Pin Count :

3

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Polarity :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

MMUN22**L

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 3 hours ago)

Transistor Type :

NPN - Pre-Biased

Mounting Type :

Surface Mount

Published :

2004

Contact Plating :

Tin

Number of Terminations :

3