MMUN2212LT1G
- Mfr.Part #
- MMUN2212LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS NPN 50V SOT23-3
- Stock
- 15,234
- In Stock :
- 15,234
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 5mA 10V
- Resistor - Emitter Base (R2) :
- 22 k Ω
- Voltage - Rated DC :
- 50V
- Operating Supply Voltage :
- 50V
- Pbfree Code :
- yes
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 50V
- Current Rating :
- 100mA
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MMUN22**L
- Collector Emitter Saturation Voltage :
- 250mV
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Max Output Current :
- 100mA
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Power Dissipation :
- 246mW
- Continuous Collector Current :
- 100mA
- Width :
- 1.3mm
- hFE Min :
- 60
- Length :
- 2.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistor - Base (R1) :
- 22 k Ω
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- JESD-609 Code :
- e3
- Min Operating Temperature :
- -55°C
- Height :
- 940μm
- Max Operating Temperature :
- 150°C
- Max Power Dissipation :
- 246mW
- Published :
- 2004
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN - Pre-Biased
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- Current - Collector Cutoff (Max) :
- 500nA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Datasheets
- MMUN2212LT1G

MMUN2212LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
Features:
• Pre-biased for easy use
• Low collector-emitter saturation voltage
• High current gain
• Low noise
• High switching speed
• Low power consumption
• High reliability
Applications: The MMUN2212LT1G is suitable for use in a wide range of applications, including power management, audio amplifiers, motor control, and switching circuits. It is also suitable for use in automotive, industrial, and consumer electronics.
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