MMUN2212LT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Polarity :

NPN

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Resistor - Base (R1) :

22 k Ω

Resistor - Emitter Base (R2) :

22 k Ω

Continuous Collector Current :

100mA

JESD-30 Code :

R-PDSO-G3

JEDEC-95 Code :

TO-236AB

Time@Peak Reflow Temperature-Max (s) :

30

Max Breakdown Voltage :

50V

Terminal Finish :

Tin/Lead (Sn/Pb)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Power Dissipation :

246mW

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Collector Emitter Breakdown Voltage :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Current - Collector Cutoff (Max) :

500nA

Voltage - Rated DC :

50V

Pin Count :

3

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

240

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

250mV

Transistor Type :

NPN - Pre-Biased

Terminal Position :

Dual

Max Collector Current :

100mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Base Part Number :

MMUN22**L

Lead Free :

Contains Lead

Published :

2007

hFE Min :

60

Max Operating Temperature :

150°C

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Current Rating :

100mA

Mount :

Surface Mount

Min Operating Temperature :

-55°C

JESD-609 Code :

e0

Max Power Dissipation :

246mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)