MMUN2131LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Current Rating :

-100mA

Factory Lead Time :

9 Weeks

Terminal Form :

Gull wing

Number of Pins :

3

Transistor Type :

PNP - Pre-Biased

Pbfree Code :

yes

Terminal Position :

Dual

Transistor Application :

SWITCHING

Voltage - Rated DC :

-50V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

50V

JESD-609 Code :

e3

Max Collector Current :

100mA

ECCN Code :

EAR99

Min Operating Temperature :

-55°C

Number of Terminations :

3

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

8

Element Configuration :

Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2010

Polarity :

PNP

Surface Mount :

yes

Power Dissipation :

246mW

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Continuous Collector Current :

100mA

Max Operating Temperature :

150°C

Terminal Finish :

Tin (Sn)

Base Part Number :

MMUN21**L

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

246mW

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Radiation Hardening :

No

Number of Elements :

1

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

2.2 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Resistor - Base (R1) :

2.2 k Ω

Lead Free :

Lead Free