IXTT96N15P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-268

Input Capacitance :

3.5 nF

Rds On Max :

24 mΩ

Transistor Application :

SWITCHING

Min Operating Temperature :

-55 °C

Subcategory :

MOSFETs

Continuous Drain Current (ID) :

96A

Turn-Off Delay Time :

66 ns

Factory Lead Time :

24 Weeks

Product Type :

MOSFET

Number of Channels :

1 Channel

Pin Count :

4

Configuration :

Single

Width :

14 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Series :

PolarHT™

JESD-609 Code :

e3

Package :

Tube

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

150 V

Length :

16.05 mm

Rds On (Max) @ Id, Vgs :

24m Ω @ 500mA, 10V

Manufacturer :

IXYS

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

480W

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Product Category :

MOSFET

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

96A Tc

Fall Time (Typ) :

18 ns

Pulsed Drain Current-Max (IDM) :

250A

Power Dissipation-Max :

480W Tc

Case Connection :

DRAIN

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Number of Terminals :

2

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Channel Mode :

Enhancement

Number of Terminations :

2

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 175 C

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Max Power Dissipation :

480 W

Number of Elements :

1

Published :

2006

Drain to Source Breakdown Voltage :

150V

Drain to Source Resistance :

24 mΩ

Terminal Position :

Single

Terminal Form :

Gull wing

Base Product Number :

IXTT96

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Max Operating Temperature :

175 °C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

--

Rise Time :

33ns

Avalanche Energy Rating (Eas) :

1000 mJ

Height :

5.1 mm

JEDEC-95 Code :

TO-268AA

JESD-30 Code :

R-PSSO-G2

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation (Max) :

480W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

RoHS :

Compliant

FET Type :

N-Channel

Transistor Element Material :

SILICON

Brand :

IXYS

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

150 V

Mounting Style :

SMD/SMT

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.024Ohm

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA