IXTT96N15P

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Mfr.Part #
IXTT96N15P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 150V 96A TO268
Stock
56
In Stock :
56

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 175 C
Qualification Status :
Not Qualified
Turn-Off Delay Time :
66 ns
Continuous Drain Current (ID) :
96A
Drain-source On Resistance-Max :
0.024Ohm
Terminal Form :
Gull wing
Mounting Style :
SMD/SMT
Reach Compliance Code :
not_compliant
RoHS :
Compliant
Number of Terminals :
2
Channel Mode :
Enhancement
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Case Connection :
DRAIN
Manufacturer :
IXYS
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
TO-268
Current - Continuous Drain (Id) @ 25°C :
96A Tc
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
Max Operating Temperature :
175 °C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Element Configuration :
Single
Drain to Source Resistance :
24 mΩ
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Power Dissipation (Max) :
480W (Tc)
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
2
Terminal Finish :
Matte Tin (Sn)
Number of Channels :
1 Channel
Drain to Source Breakdown Voltage :
150V
Input Capacitance :
3.5 nF
Brand :
IXYS
Packaging :
Tube
Min Operating Temperature :
-55 °C
Minimum Operating Temperature :
- 55 C
Transistor Type :
1 N-Channel
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Avalanche Energy Rating (Eas) :
1000 mJ
Product Type :
MOSFET
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
150 V
Height :
5.1 mm
Max Power Dissipation :
480 W
Factory Lead Time :
24 Weeks
Published :
2006
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
DS Breakdown Voltage-Min :
150 V
FET Feature :
--
Product Status :
Active
Vgs (Max) :
±20V
Power Dissipation-Max :
480W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Product Number :
IXTT96
Rds On Max :
24 mΩ
Rise Time :
33ns
Package Shape :
RECTANGULAR
Surface Mount :
yes
RoHS Status :
ROHS3 Compliant
JEDEC-95 Code :
TO-268AA
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PSSO-G2
Series :
PolarHT™
Input Capacitance (Ciss) (Max) @ Vds :
3500pF @ 25V
Length :
16.05 mm
Transistor Polarity :
N-Channel
FET Type :
N-Channel
Power Dissipation :
480W
Pulsed Drain Current-Max (IDM) :
250A
Product Category :
MOSFET
Pbfree Code :
yes
Subcategory :
MOSFETs
Terminal Position :
Single
Fall Time (Typ) :
18 ns
Configuration :
Single
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
24m Ω @ 500mA, 10V
Width :
14 mm
Datasheets
IXTT96N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT96N15P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXTT96N15P pinout, IXTT96N15P datasheet PDF, IXTT96N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT96N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT96N15P


N-Channel Tube 24m Ω @ 500mA, 10V ±20V 3500pF @ 25V 110nC @ 10V 150 V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT96N15P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 96A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 66 ns.Peak drain current is 250A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 24 mΩ when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 150 V.For this transistor to work, a voltage 150 V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTT96N15P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 96A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 250A.
single MOSFETs transistor is 24 mΩ
a 150 V drain to source voltage (Vdss)


IXTT96N15P Applications


There are a lot of IXYS
IXTT96N15P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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